Katie Dropiewski
Research Projects:
-III-V Nanowire FET device fabrication and characterization
-III-V FinFET device fabrication and characterization
Fabrication Tools:
-Deposition: Magnetron Sputter, ALD, EBeam Evaporator
-Etch: RIE
-Photolithography: EVG Contact Aligner, OAI Contact Aligner
-Characterization: SEM, AFM, XPS, EDX, HP 4194A Oscilloscope, Keithley 4200, Optical Microscope
Characterization Techniques:
-Capacitance-Voltage (Dit, gm)
-Current-Voltage (Id-Vgs, Id-Vds)
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Katherine Dropiewski Graduates from the University at Albany
UAlbany congratulates Katherine Dropiewski of Slingerlands, NY, who graduated with a Master of Science in Nanoscale Engineering with the Class of 2018.
August, 09 2018 - Verified by University at Albany
IEEE
Winter 2010
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University of Michigan
Added by Katie
Summer Intern at International Business Machines Corp. (IBM)
-Developed and optimized a simplified scan chain macro for use in early yield learning
-Designed clock tree generation flow using Cadence automatic place and route tool
-Identified and modelled path to analyze Cadence results with Hpice simulations
-Presented conclusions regularly using posters and PowerPoint slide decks
June 2016 - August 2016
Graduate Research Assistant at SUNY Polytechnic Institute
-Researching, fabricating and characterizing transistors made out of novel materials, such as GaSb and InAs, in atypical structures, including nanowires and fins.
-Building the gate and source/drain portion of the stack using a variety of manufacting tools. -Operating deposition tools that use different mechanisms to coat a surface with material, including Magnetron Sputtering (PVD), Atomic Layer Deposition (ALD) and E-beam Evaporation.
-Operating contact alignment photolithography tools, chemical and plasma etches (RIE) to remove unwanted material in conjunction with photolithography.
-Optimizing manufacturing processes for nanowires to improve their potential as the channel for field-effect transistors as well as built the gate and source/drain contacts of the device stack for field-effect transistors (FET) using fins as the channel.
-Analyzing FETs using a broad range of optical, physical and electrical characterization techniques, including optical microscopy, Scanning Electron Microscopy (SEM), Elastic backscattering spectrometry (EBS), Capacitance-Voltage profiling, two-point probing, four-point probing, and Current-voltage profiling.
-Presenting data regarding her research in poster and lecture format.
August 2014 - Present
Validation Engineer at Intel Corporation S.A./NV
-Developed and executed test plan for DDR Memory Signal Integrity Validation
-Collaborated with HIP Design Engineers, Memory Reference Code Engineers to improve yield
-Identified bugs caused by semiconductor variation on SoC products
-Developed complete automation software for voltage and temperature permutations on SoC products
-Resolved FPGA bugs in collaboration with tool owner
-Identified and root-caused RTL and Firmware bugs via Veloce emulation environment
-Identified and debugged multiple electrical and logical failures on silicon
-Developed and executed test content in SLE and FPGA emulation systems
-Designed and owned test plans for multiple IPs for pre- and post-silicon
-Trained and managed contractor resources as technical expert
June 2011 - July 2014
Co-op Engineer at Advanced Micro Devices Inc. (AMD)
Part of the PEO Test Strategy Team
-Created and debugged Verilog code that modelled circuits for test environment.
-Wrote Perl scripts manipulating .kdf and .csv files.
-Prepared yield reports using Microsoft Office and Genesis.
-Tested and debugged patterns in Virtual Test environment.
January 2010 - August 2010