Sign In or Use Email

Katie Dropiewski

Majoring in Nanoengineering
University at Albany, Class of 2019
From ALBANY, NY
Research Projects: -III-V Nanowire FET device fabrication and characterization -III-V FinFET device fabrication and characterization Fabrication Tools: -Deposition: Magnetron Sputter, ALD, EBeam Evaporator -Etch: RIE -Photolithography: EVG Contact Aligner, OAI Contact Aligner -Characterization: SEM, AFM, XPS, EDX, HP 4194A Oscilloscope, Keithley 4200, Optical Microscope Characterization Techniques: -Capacitance-Voltage (Dit, gm) -Current-Voltage (Id-Vgs, Id-Vds)
Follow Katie

Katherine Dropiewski Graduates from the University at Albany

UAlbany congratulates Katherine Dropiewski of Slingerlands, NY, who graduated with a Master of Science in Nanoscale Engineering with the Class of 2018.

August, 09 2018 - Verified by University at Albany
IEEE
Winter 2010 - University of Michigan
Added by Katie
Summer Intern at International Business Machines Corp. (IBM)
-Developed and optimized a simplified scan chain macro for use in early yield learning -Designed clock tree generation flow using Cadence automatic place and route tool -Identified and modelled path to analyze Cadence results with Hpice simulations -Presented conclusions regularly using posters and PowerPoint slide decks
June 2016 - August 2016
Graduate Research Assistant at SUNY Polytechnic Institute
-Researching, fabricating and characterizing transistors made out of novel materials, such as GaSb and InAs, in atypical structures, including nanowires and fins. -Building the gate and source/drain portion of the stack using a variety of manufacting tools. -Operating deposition tools that use different mechanisms to coat a surface with material, including Magnetron Sputtering (PVD), Atomic Layer Deposition (ALD) and E-beam Evaporation. -Operating contact alignment photolithography tools, chemical and plasma etches (RIE) to remove unwanted material in conjunction with photolithography. -Optimizing manufacturing processes for nanowires to improve their potential as the channel for field-effect transistors as well as built the gate and source/drain contacts of the device stack for field-effect transistors (FET) using fins as the channel. -Analyzing FETs using a broad range of optical, physical and electrical characterization techniques, including optical microscopy, Scanning Electron Microscopy (SEM), Elastic backscattering spectrometry (EBS), Capacitance-Voltage profiling, two-point probing, four-point probing, and Current-voltage profiling. -Presenting data regarding her research in poster and lecture format.
August 2014 - Present
Validation Engineer at Intel Corporation S.A./NV
-Developed and executed test plan for DDR Memory Signal Integrity Validation -Collaborated with HIP Design Engineers, Memory Reference Code Engineers to improve yield -Identified bugs caused by semiconductor variation on SoC products -Developed complete automation software for voltage and temperature permutations on SoC products -Resolved FPGA bugs in collaboration with tool owner -Identified and root-caused RTL and Firmware bugs via Veloce emulation environment -Identified and debugged multiple electrical and logical failures on silicon -Developed and executed test content in SLE and FPGA emulation systems -Designed and owned test plans for multiple IPs for pre- and post-silicon -Trained and managed contractor resources as technical expert
June 2011 - July 2014
Co-op Engineer at Advanced Micro Devices Inc. (AMD)
Part of the PEO Test Strategy Team -Created and debugged Verilog code that modelled circuits for test environment. -Wrote Perl scripts manipulating .kdf and .csv files. -Prepared yield reports using Microsoft Office and Genesis. -Tested and debugged patterns in Virtual Test environment.
January 2010 - August 2010
© Copyright 2024 • Merit Pages, Inc.Terms of ServicePrivacy Policy