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Hanbin Ying

Majored in Electrical Engineering
Georgia Institute of Technology, Class of 2021
From Fuzhou, China
I am seeking an internship in the semiconductor device physics area.I possess a 4.0 GPA at Georgia Tech with 2 co-authored papers in semiconductor device physics. I had more than a years experience in characterizing semiconductor devices from different platforms and generations (8HP, 9HP from IBM, 3ZL from TI, etc) and investigating semiconductor reliability physics. I frequently used Sentaurus TCAD to analyze device behaviors under reverse breakdown, mixed-mode stress, and low temperature operations. I am also proficient in chip packaging, wirebonding, and PCB soldering. Working as a design verification intern at Echostar Technology for 8 months, I developed excellent multitasking and time management skills with a dedication for work.
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Hanbin Ying Receives Degree from Georgia Tech

Hanbin Ying of Fuzhou, China, has earned a Doctor of Philosophy in Electrical and Computer Engineering from the Georgia Institute of Technology in Atlanta. Ying was among approximately 4,435 under...

June, 07 2021 - Verified by Georgia Institute of Technology
Hanbin Ying Receives Degree from Georgia Tech

Hanbin Ying of , China, has earned a Master of Science in Electrical and Computer Engineering from the Georgia Institute of Technology in Atlanta. Ying was among approximately 3,800 undergraduate ...

June, 12 2019 - Verified by Georgia Institute of Technology
Hanbin Ying Receives Degree from Georgia Tech

Hanbin Ying of Fuzhou, China, has earned a Bachelor of Science in Electrical Engineering from the Georgia Institute of Technology in Atlanta. Ying was among approximately 3,000 undergraduate and g...

June, 14 2016 - Verified by Georgia Institute of Technology
Undergraduate Research Assistant at Georgia Institute of Technology
Silicon Germanium Research Team, Advisor: Dr. John Cressler • Implemented a temperature and Germanium mole fraction dependent thermal conductivity model for SiGe device • Conducted transient analysis of heavy ion strikes on SiGe HBT circuits • Investigated the reliability physics of SiGe HBTs, such as high I, high V, and mixed mode stress degradation mechanism • Calibrated impact ionization model and fT/fMax model in Sentaurus TCAD • Packaged and wire-bonded dies for radiation experiment and cryogenic measurement (from 78K to 573K) • Characterized device physics from Explored linearity performance optimization in profile design
January 2015 - Present

Graduation 3

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