Nujhat Tasneem

My research involves fabrication and characterization of ferroelectric thin-film devices for logic and memory technologies (FEFETs, NCFETs, FERAMs). The focus of this work is to perform systematic experimental investigation of FEFETs to understand the device physics, which is necessary to optimize its design, especially as a non-volatile memory (NVM) element. Different electrical and structural analysis techniques are also employed to understand the influence of underlying microstructures on the electrical performance of ferroelectric-based devices. This can provide valuable insights about processes necessary to engineer the gate-stack of an FEFET and enhance its performance and also can aid in building a predictive FEFET model.